bcv26 bcv26 pnp surface mount darlington si-epi-planar transistors si-epi-planar darlington-transistoren fr die oberfl?chenmontage pnp version 2015-05-12 dimensions - ma?e [mm] 1 = b 2 = e 3 = c power dissipation C verlustleistung 200 mw plastic case kunststoffgeh?use sot-23 (to-236) weight approx. C gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) bcv26 collector-emitter-volt. C kollektor-emitter-spannung b open - v ceo 30 v collector-base-voltage C kollektor-basis-spannung e open - v cbo 40 v emitter-base-voltage C emitter-basis-spannung c open - v ebo 10 v power dissipation C verlustleistung p tot 200 mw 1 ) collector current C kollektorstrom (dc) - i c 500 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -55...+150c -55+150c characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. dc current gain C kollektor-basis-stromverh?ltnis 2 ) - v ce = 5 v, - i c = 1 ma - v ce = 5 v, - i c = 10 ma - v ce = 5 v, - i c = 100 ma h fe h fe h fe 4000 10000 20000 C C C C C collector-emitter saturation voltage C kollektor-emitter-s?ttigungsspg. 2 ) - i c = 100 ma, - i b = 0.1 ma - v cesat C C 1.0 v base-emitter saturation voltage C basis-emitter-s?ttigungsspannung 2 ) - i c = 100 ma, - i b = 0.1 ma - v besat C C 1.5 v 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% ? diotec semiconductor ag http://www.diotec.com/ 1 2 . 4 1 . 3 0 . 1 1.1 +0.1 0.4 +0.1 2.9 0.1 1 2 3 type code 1.9 0.1 -0.05 -0.2 0 . 2
bcv26 characteristics (t j = 25c) kennwerte (t j = 25c) collector-base cutoff current C kollektor-basis-reststrom - v cb = 30 v, (e open) - i cbo C C 100 na emitter-base-cutoff current C emitter-basis-reststrom - v eb = 10 v, (c open) - i ebo C C- 100 na gain-bandwidth product C transitfrequenz - i c = 5 ma, - v ce = 30 v, f = 100 mhz f t C 220 mhz C thermal resistance junction to ambient air w?rmewiderstand sperrschicht C umgebende luft r tha < 420 k/w 1 ) 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 http://www.diotec.com/ ? diotec semiconductor ag [%] p tot 120 100 80 60 40 20 0 [c] t a 150 100 50 0 power dissipation versus ambient temperature ) verlustleistung in abh. von d. umgebungstemp. ) 1 1
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